savantic semiconductor product specification silicon pnp power transistors 2SB1411 d escription with to-220f package darlington high dc current gain low collector saturation voltage applications switching applications hammer drive ,pulse motor drive applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -7 v i c collector current -2 a i cm collector current-peak -3 a i b base current -0.5 a t c =25 20 w p c collector power dissipation t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1411 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -110 v v cesat collector-emitter saturation voltage i c =-5a; i b =-5ma -2.5 v v besat base-emitter saturation voltage i c =-5a; i b =-5ma -3.0 v i cbo collector cut-off current v cb =-110v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-5a ; v ce =-4v 5000 f t transition frequency i c =-0.5a ; v ce =-12v 100 mhz c ob collector output capacitance f=1mhz;v cb =-10v 110 pf switching times t on turn-on time 1.1 s t s storage time 3.2 s t f fall time i c =-5a i b1 =-i b2 =-5ma v cc =30v ,r l =6 b 1.1 s h fe classifications o p y 5000-12000 6500-20000 15000-30000
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1411 package outline fig.2 outline dimensions
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